001 -Identificacion Principal del registro
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Identificacion Principal del registro
INGC-EBK-000102
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003 -Control Number Identifier
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Control Number Identifier
AR-LpUFI
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005 -LAST MODIFICATION DATE
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LAST MODIFICATION DATE
20160906125541
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007 -CONTROL FIELD
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CONTROL FIELD
cr nn 008mamaa
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008 -CONTROL FIELD
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CONTROL FIELD
131022s2014 xxu| s |||| 0|eng d
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020 -INTERNATIONAL STANDARD BOOK NUMBER
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a
International Standard Book Number
9781461481249
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024 -OTHER STANDARD IDENTIFIER
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a
Standard number or code
10.1007/978-1-4614-8124-9
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245 -TITLE STATEMENT
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a
Title
Nanowire Field Effect Transistors: Principles and Applications
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h
Medium
[libro electrónico] /
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c
Statement of responsibility, etc
edited by Dae Mann Kim, Yoon-Ha Jeong.
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260 -PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
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a
Place of publication, distribution, etc
New York, NY :
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b
Name of publisher, distributor, etc
Springer New York :
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b
Name of publisher, distributor, etc
Imprint: Springer,
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c
Date of publication, distribution, etc
2014.
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300 -PHYSICAL DESCRIPTION
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a
Extent
vi, 290 p :
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b
Other physical details
il.
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505 -FORMATTED CONTENTS NOTE
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a
Formatted contents note
Quantum Wire and Sub-Bands -- Carrier Concentration and Transport -- P-N Junction Diode: I-V Behavior and Applications -- Silicon Nanowire Field Effect Transistor -- Fabrication of Nanowires and their Applications -- Characterization of Nanowire Devices under Electrostatic Discharge Stress Conditions -- Green Energy Devices -- Nanowire Field Effect Transistors in Optoelectronics -- Nanowire BioFETs: An Overview -- Lab On a Wire: Application of Silicon Nanowires for Nanoscience and Biotechnology -- Nanowire FET Circuit Design â_" An Overview.
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520 -SUMMARY, ETC.
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a
Summary, etc
â_oNanowire Field Effect Transistor: Basic Principles and Applicationsâ__ places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Electronic circuits.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Electronics.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Microelectronics.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Optical materials.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Electronic materials.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Nanotechnology.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Engineering.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Instrumentation.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Electronic Circuits and Devices.
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700 -ADDED ENTRY--PERSONAL NAME
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a
Personal name
Kim, Dae Mann,
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e
Relator term
ed.
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700 -ADDED ENTRY--PERSONAL NAME
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a
Personal name
Jeong, Yoon-Ha,
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e
Relator term
ed.
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856 -ELECTRONIC LOCATION AND ACCESS
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u
Uniform Resource Identifier (R)
http://dx.doi.org/10.1007/978-1-4614-8124-9
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942 -Biblioitem information
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929 -Medio de adquisicion
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