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001 -Identificacion Principal del registro
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Identificacion Principal del registro
INGC-EBK-000206
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003 -Control Number Identifier
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Control Number Identifier
AR-LpUFI
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005 -LAST MODIFICATION DATE
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LAST MODIFICATION DATE
20160826112412
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007 -CONTROL FIELD
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CONTROL FIELD
cr nn 008mamaa
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008 -CONTROL FIELD
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CONTROL FIELD
131007s2014 gw | s |||| 0|eng d
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020 -INTERNATIONAL STANDARD BOOK NUMBER
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a
International Standard Book Number
9783319011653
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024 -OTHER STANDARD IDENTIFIER
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a
Standard number or code
10.1007/978-3-319-01165-3
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100 -MAIN ENTRY--PERSONAL NAME
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a
Personal name
Srivastava, Viranjay M.
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245 -TITLE STATEMENT
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a
Title
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
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h
Medium
[libro electrónico] /
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c
Statement of responsibility, etc
by Viranjay M. Srivastava, Ghanshyam Singh.
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260 -PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
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a
Place of publication, distribution, etc
Cham :
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b
Name of publisher, distributor, etc
Springer International Publishing :
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b
Name of publisher, distributor, etc
Imprint: Springer,
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c
Date of publication, distribution, etc
2014.
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300 -PHYSICAL DESCRIPTION
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a
Extent
xv, 199 p. :
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b
Other physical details
il.
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490 -SERIES STATEMENT
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a
Series statement
Analog Circuits and Signal Processing,
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x
International Standard Serial Number
1872-082X ;
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v
Volume number/sequential designation
122
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505 -FORMATTED CONTENTS NOTE
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a
Formatted contents note
Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.
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520 -SUMMARY, ETC.
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a
Summary, etc
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·        Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·        Explains the design of RF switches using the technologies presented and simulates switches; ·        Verifies parameters and discusses feasibility of devices and switches.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Engineering.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Semiconductors.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Electrical engineering.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Electronic circuits.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Circuits and Systems.
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650 -SUBJECT ADDED ENTRY--TOPICAL TERM
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a
Topical term or geographic name as entry element
Communications Engineering, Networks.
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700 -ADDED ENTRY--PERSONAL NAME
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a
Personal name
Singh, Ghanshyam.
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856 -ELECTRONIC LOCATION AND ACCESS
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u
Uniform Resource Identifier (R)
http://dx.doi.org/10.1007/978-3-319-01165-3
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942 -Biblioitem information
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929 -Medio de adquisicion
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