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Novel Three-state Quantum Dot Gate Field Effect Transistor Fabrication, Modeling and Applications by Supriya Karmakar. (Karmakar, Supriya.)
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001 -Identificacion Principal del registro

Identificacion Principal del registro INGC-EBK-000838

003 -Control Number Identifier

Control Number Identifier AR-LpUFI

005 -LAST MODIFICATION DATE

LAST MODIFICATION DATE 20160920102310

007 -CONTROL FIELD

CONTROL FIELD cr nn 008mamaa

008 -CONTROL FIELD

CONTROL FIELD 131120s2014 ii | s |||| 0|eng d

020 -INTERNATIONAL STANDARD BOOK NUMBER

a International Standard Book Number 9788132216353

024 -OTHER STANDARD IDENTIFIER

a Standard number or code 10.1007/978-81-322-1635-3

100 -MAIN ENTRY--PERSONAL NAME

a Personal name Karmakar, Supriya.

245 -TITLE STATEMENT

a Title Novel Three-state Quantum Dot Gate Field Effect Transistor

h Medium [libro electrónico] : ;

b Remainder of title Fabrication, Modeling and Applications /

c Statement of responsibility, etc by Supriya Karmakar.

260 -PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)

a Place of publication, distribution, etc New Delhi :

b Name of publisher, distributor, etc Springer India :

b Name of publisher, distributor, etc Imprint: Springer,

c Date of publication, distribution, etc 2014.

300 -PHYSICAL DESCRIPTION

a Extent xiv, 134 p. :

b Other physical details il.

505 -FORMATTED CONTENTS NOTE

a Formatted contents note Introduction: Multi State Devices and Logic -- Quantum Dot Gate Field Effect Transistor Device Structures -- Quantum Dot Gate Field Effect Transistors Fabrication and Characterization -- Quantum DOT Gate Field Effect Transistors Theory and Device Modeling -- Quantum Dot Gate NMOS Inverter -- Quantum Dot Gate Field Effect Transistor (QDGFET): Circuit Model and Ternary Logic Inverter -- Analog-to-Digital Converter (ADC) and Digital-to-Analog Converter (DAC) Using Quantum DOT Gate Field Effect Transistor (QDGFET) -- Performance in SUB-25nm Range -- Conclusions.

520 -SUMMARY, ETC.

a Summary, etc The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.

650 -SUBJECT ADDED ENTRY--TOPICAL TERM

a Topical term or geographic name as entry element Electronic circuits.

650 -SUBJECT ADDED ENTRY--TOPICAL TERM

a Topical term or geographic name as entry element Nanotechnology.

650 -SUBJECT ADDED ENTRY--TOPICAL TERM

a Topical term or geographic name as entry element Engineering.

650 -SUBJECT ADDED ENTRY--TOPICAL TERM

a Topical term or geographic name as entry element Microengineering.

650 -SUBJECT ADDED ENTRY--TOPICAL TERM

a Topical term or geographic name as entry element Circuits and Systems.

650 -SUBJECT ADDED ENTRY--TOPICAL TERM

a Topical term or geographic name as entry element Electronic Circuits and Devices.

856 -ELECTRONIC LOCATION AND ACCESS

u Uniform Resource Identifier (R) http://dx.doi.org/10.1007/978-81-322-1635-3

942 -Biblioitem information

c item type EBK

929 -Medio de adquisicion

a descripción COM


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