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Biblioteca Julio Castiñeiras. Sistema de Información Integrado - Facultad de Ingeniería UNLP
Facultad de Ingeniería | 115 esq.47 | Horario: Lunes a Viernes 8 a 19 hs.
E-mail: bibcentral@ing.unlp.edu.ar
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Información bibliografica (registro INGC-EBK-000206) |
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Título: |
MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by Viranjay M. Srivastava, Ghanshyam Singh. |
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Autor:
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Srivastava, Viranjay M.
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Otros autores: |
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Singh, Ghanshyam.
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Editado por: |
Springer International Publishing :;Imprint: Springer,
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Año de publicación: |
2014.
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Lugar de publicación: |
Cham :
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Descripción física: |
xv, 199 p. : il. |
ISBN: |
9783319011653
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Colección: |
Analog Circuits and Signal Processing,
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Materias: |
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Communications Engineering, Networks. |
Circuits and Systems. |
Electronic circuits. |
Electrical engineering. |
Semiconductors. |
Engineering. |
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Notas: |
Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope. |
Sumario: |
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·        Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·        Explains the design of RF switches using the technologies presented and simulates switches; ·        Verifies parameters and discusses feasibility of devices and switches. |
URL: |
http://dx.doi.org/10.1007/978-3-319-01165-3
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Tapa y contenido (Amazon.com) |
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