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Información bibliografica (registro INGC-EBK-000283)
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Título:
High-Bandwidth Memory Interface by Chulwoo Kim, Hyun-Woo Lee, Junyoung Song.
Autor:
Kim, Chulwoo.
Otros autores:
| Lee, Hyun-Woo.  |  Song, Junyoung.  | 
Editado por:
Springer International Publishing :;Imprint: Springer,
Año de publicación:
2014.
Lugar de publicación:
Cham :
Descripción física:
viii, 88 p. : il.
ISBN:
9783319023816
Colección:
SpringerBriefs in Electrical and Computer Engineering,
Materias:
| Electronic Circuits and Devices. | Instrumentation. | Circuits and Systems. | Microelectronics. | Electronics. | Electronic circuits. | Engineering. |
Notas:
An introduction to high-speed DRAM -- An I/O Line Configuration and Organization of DRAM -- Clock generation and distribution -- Transceiver Design -- TSV Interface for DRAM.
Sumario:
This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.   â_¢Â Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; â_¢Â Presents state-of-the-art techniques for memory interface design; â_¢Â Covers memory interface design at both the circuit level and system architecture level.
URL:
http://dx.doi.org/10.1007/978-3-319-02381-6
Tapa y contenido (Amazon.com)

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